Samsung Electronics unveiled its HBM4E chip at Nvidia GTC 2026, offering faster speeds and higher bandwidth than its predecessor. Nvidia CEO Jensen Huang highlighted expanding ties, with Samsung supporting AI platforms and chip manufacturing, strengthening their partnership.
Seoul: Samsung Electronics unveiled its seventh-generation high bandwidth memory (HBM), namely HBM4E, during an annual technology conference hosted by Nvidia, where the U.S. tech giant highlighted its expanding partnership with the Korean chipmaker beyond memory chips.
Samsung Electronics provided updates on the development of its HBM4E products as it showcased its capabilities as a total memory solution provider for Nvidia's Vera Rubin AI platform during Nvidia GTC 2026, which kicked off on Monday (U.S. time) for a four-day run in California, reports Yonhap news agency.
It marked the first time Samsung Electronics unveiled the physical HBM4E chip, which is expected to support speeds of 16 gigabits per second per pin and bandwidth of 4.0 terabytes per second.
The performance is an improvement over the HBM4, which has speeds of 13 gigabits per second per pin and bandwidth of 3.3 terabytes per second.
-
Chanakya Niti: 5 Traits of “Nice” People Who Can Hurt You the Most
-
Eid al-Fitr 2026: Celebrating Unity and Joy
-
Facebook Update: Earn Lakhs by Creating Reels on Facebook—Here's How
-
6 Secrets Behind Lord Shiva's Third Eye That Few Know
-
Automobile Update: What is the Price of the New Renault Duster? Get the Full Details Here
